关键词：磁控溅射；ITO薄膜；溅射气压；低温 [gap=1177]Key words：magnetron sputtering; ITO thin films; sputtering pressure; low temperature
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Effects of the sputtering pressure P, the distance between the target and the substrate D, the alloying dopant and the annealing temperature on the texture and morphology of films were investigated.
改变溅射气压P和靶材与基底之间的距离(镀距)D,研究了溅射参数P、D,合金掺杂以及退火温度对溅射铜薄膜织构的影响。
参考来源 - 溅射铜和铜合金薄膜的微观结构与性能With increasing sputtering pressure, the thickness and resistivity first increased and then decreased, reaching their minimums at the pressure of 1.1Pa.
随着溅射气压的增加,薄膜的厚度出现先增加再减小的变化趋势,在1.1Pa时厚度达到最大值。 ITO薄膜的电阻率也出现了先增加再减小的变化。
参考来源 - ITO薄膜红外低发射率机理研究With increasing sputtering pressure, the transmittance increases.
溅射压强增加,透光率略有升高。
参考来源 - In掺杂ZnO透明导电薄膜的制备与光电性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
With increasing sputtering pressure, the transmittance increases.
溅射压强增加，透光率略有升高。
XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films.
研究结果表明，溅射压强对TGZO薄膜的结构和电阻率有重要影响。
The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious.
并发现了靶基距、功率和溅射气压对薄膜矫顽力的影响较大，其中靶基距是薄膜矫顽力最主要的控制因素。 而溅射时间在所取的水平上对薄膜矫顽力的影响最小。
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