With increasing sputtering pressure, the transmittance increases.
溅射压强增加，透光率略有升高。
XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films.
研究结果表明，溅射压强对TGZO薄膜的结构和电阻率有重要影响。
The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious.
并发现了靶基距、功率和溅射气压对薄膜矫顽力的影响较大，其中靶基距是薄膜矫顽力最主要的控制因素。 而溅射时间在所取的水平上对薄膜矫顽力的影响最小。
The effect of sputtering conditions on electrical properties of the tantalum-silicon films and the relation between sputtering voltage, current and pressure was investigated.
研究了溅射条件对钽硅薄膜电性能的影响以及溅射电压、溅射电流和溅射气压之间的关系。
It has the characteristic of working on higher pressure and lower voltage and having a high cathode sputtering rate.
它具有工作气压高，维持电压低，阴极溅射率高等特点。
The results show that the transmittances of the films are higher and higher with the sputtering total pressure increase.
由试验可知，薄膜透过率随溅射气体总压的升高而升高。
The experimental results show that, liquid sputtering velocity and distance increase with the decrease of the ambient pressure.
实验结果表明，液体的溅射速度和距离随着背景气压的降低而增加。
The different phase composition of the films has been obtained by changing oxygen partial pressure, sputtering powers, deposition times and materials of substrate.
通过改变氧分压强、溅射功率、沉积时间和衬底材料来获得不同相组成的氧化钒薄膜。
HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.
用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。
The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；
The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；
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