... implanted channel 离子注入沟道 implantation damage 离子注入损伤 implantation annealing 离子注入猬缩撤退退却火 ...
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The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations.
位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。
After thermal annealing about 60% of radiation damage induced by implantation can be restored.
在热退火后，约60%的注入引起的辐射损伤可以得到恢复。
Ion implantation as a new mutagen caused high mutation rate and wide mutational spectrum with low damage, and it was also mutated in the direction.
离子注入是一种新型的作物诱变技术。离子注入不仅损伤轻，而且突变率高，突变谱广并可定向引变。
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