... ion grid theory 离子栅极说 ion implantation damage 离子注入损伤 ion implantation doping 离子注入掺杂 ...
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The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations.
位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。
Ion implantation as a new mutagen caused high mutation rate and wide mutational spectrum with low damage, and it was also mutated in the direction.
离子注入是一种新型的作物诱变技术。离子注入不仅损伤轻,而且突变率高,突变谱广并可定向引变。
The damage of the cytoskeleton system in the pollen and the pollen tube of Pinus thunbergii induced by ion beam implantation were researched.
以黑松花粉粒和花粉管为试验材料,研究了离子注入对细胞骨架系统的损伤效应。
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