... headroom(余度)：voltage～(电压余度) hot carrier effects(热载流子效应) hybrid models(混合模型) ...
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The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应(hce)进行了研究。
The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。
Under high excitation, hot phonon effects were found to delay the carrier cooling process.
在高激发下，热声子效应被发现延迟的载波冷却过程。
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