The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应(hce)进行了研究。
The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。
Under high excitation, hot phonon effects were found to delay the carrier cooling process.
在高激发下，热声子效应被发现延迟的载波冷却过程。
The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.
介绍了热载流子效应与电路拓扑结构及器件参数之间的关系，并在此基础上提出了基本逻辑门的一些抗热载流子加固方法。
The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.
介绍了热载流子效应与电路拓扑结构及器件参数之间的关系，并在此基础上提出了基本逻辑门的一些抗热载流子加固方法。
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