消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上,如图32所示。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
包括N型体晶硅体颗粒(01),铝衬底 (02),中间绝缘层(05),表面透明导电层(06)和减反射层(07)构成。
The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).
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