此外,我们也在(110)方向的矽基板上作了相同的实验,并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。
Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.
第一种是在在矽(111)基板上成长氧化矽,并将镧系元素-铽,以离子布植的方式植入样品。
One of them is to implant terbium ion into silicon oxides thin film which is grown on Si(111) substrates.
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