... 分波态密度 PDOS 界面态密度 density of interfacial states 有效能态密度 effective density of state ...
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... natural crystal plane 自然晶面 crystal plane density 界面态密度 crystal plane spacing 晶面间距 ...
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It is generally believed that CMOS 1/f noise is originated from the channel carrier density fluctuation or mobility fluctuation. The carrier density fluctuation depends on the Si-SiO_2 interface trap density and its energy in the band gap.
通常认为CMOS器件的1/f噪声来自沟道中载流子密度或迁移率的不规则变化,前者取决于Si-SiO_2界面态密度及其在禁带能级中的位置,后者则由载流子与声子群的散射决定。
参考来源 - 掺氮氧化硅栅介质对0.13um CMOS器件1/f噪声特性影响的研究The main work of the paper is to reduce the interface states density by optimizing the MOS technology.
本文研究的核心是如何通过对MOS工艺的合理优化来降低界面态密度。
参考来源 - 4H·2,447,543篇论文数据，部分数据来源于NoteExpress
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
同时对钛酸钡系ptcr半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
According to defect chemistry of BaTiO3 semiconducting ceramics, the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.
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