沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
同时对钛酸钡系ptcr半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
According to defect chemistry of BaTiO3 semiconducting ceramics, the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.
热态时，密度锁内分层界面的形成对大环流运动起到了阻碍作用。
And in hot state, the formation of fluid stratified interface in the density lock will stop the large circulation of fluid movement.
热态时，密度锁内分层界面的形成对大环流运动起到了阻碍作用。
And in hot state, the formation of fluid stratified interface in the density lock will stop the large circulation of fluid movement.
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