研究半导体器件的漂移-扩散模型方程解的渐近性。
The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究带雪崩项的半导体漂移-扩散模型方程弱解的惟一性问题。
The uniqueness problem of the weak solutions of the time dependent drift diffusion model for semiconductor equation with avalanche term is considered.
研究了一类带有非线性迁移率的漂移-扩散模型的混合边值问题。
In this paper we consider the following drift-diffusion model with nonlinear mobility.
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