ISE TCAD软件中器件模拟部分，提供了四种载流子输运模型，分别是：漂移扩散（drift-diffusion）、热力学(thermodynamic)、流体力学(hydrodynamic)以及量子输运(quantum transport)。
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在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
最后通过对一个存在陡峭层分布的漂移扩散方程进行求解的实例，验证了算法的可行性和有效性。
Finally, through an example of a drift and diffusion equation with steep distribution, the feasibility and effectivity of this algorithm are proved.
提出一种基于半导体器件漂移扩散模型并结合交替方向隐式时域有限差分(AD I - FDTD)法的新型全域FDTD法。
A novel global FDTD scheme based on a drift-diffuse model of semiconductor combined alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented in this paper.
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