作为 VSC-HVDC 换流阀主要组成器件的绝缘 栅双极型晶体管(insulated gate bipolar transistors, IGBT)价格相对昂贵,一旦损坏需要大量更换器件; 同时造成系统停运,带来不必要的经济损失。
基于4个网页-相关网页
作为 VSC-HVDC 换流阀主要组成器件的绝缘 栅双极型晶体管(insulated gate bipolar transistors, IGBT)价格相对昂贵,一旦损坏需要大量更换器件; 同时造成系统停运,带来不必要的经济损失。
基于2个网页-相关网页
绝缘栅双极型晶体管 IGBT ; Insulated Gate Bipolar Transistor ; Trench IGBT
绝缘栅极双极型晶体管 Isolated Gate Bipolar Transistor
沟槽栅型双极性晶体管 CSTBTTM
缘栅极双极型晶体管 insulated gate bipolar transistor
绝缘栅型双极晶体管 Insulated Gate Bipolar Transistor
该系统采用IGBT(绝缘栅双极型晶体管)器件,PWM(脉宽调制)控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术,以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
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