In the end, DC characteristics of the fabricated device were tested at room temperature. Results are as follows: Peak-to-valley current ratio (PVCR) is 7.4, and peak current density (JP) is 1.06×10~5A/cm~2.
最后,对制作的RTD进行直流参数测试,测得器件室温下的峰谷电流比(PVCR)为7.4,峰值电流密度(Jp)为1.06×10~5A/cm~2。
参考来源 - InP衬底AlAs/In·2,447,543篇论文数据,部分数据来源于NoteExpress
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