... large chemical complex ==> 大型化工联合 企业 large energy gap ==> 宽禁带 large induction motor ==> 大型感应电机 ...
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宽禁带功率元器件 功率IC产业在寻找新的宽禁带（WBG）材料，使半导体性能提升到全新的水平。碳化硅（SiC）和氮化镓（GaN）是当前的首选材料，两者均有一定的优势及劣势。
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Cree 的 GaN HEMT 微波功率放大器件：宽禁带（Wide Band Gap）材料，导热性能好、击穿电压高、饱和电子迁移速度高（适合做高频宽带器件）、功率密度大（单位栅宽功率），极间电容 / 单位功率小...
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宽禁带半导体 wide bandgap semiconductor ; Wide-bandgap semiconductors
宽禁带发射极 wide bandgap emitter
宽禁带结 wide-gap junction
禁带宽度 forbidden bandwidth ; forbidden gap ; energy gap ; band gap
宽禁带材料 Wide-band gap material
突变宽禁带结 abrupt wide-gap junction
能隙禁带宽 energy gap forbidden bandwidth
碳化硅禁带宽度 silicon carbide band gap
窄禁带宽度材料 narrow energy gap material
Light-emitting diodes constructed by one-dimensionalnanostructural ZnO and its composite materialsZinc oxide（ZnO）,as an important wide-band-gap semiconductor,hasbeen widely investigated for applications in light-emitting diodes（LEDs）,photovoltaic cells and lasers,because of its excellent photoelectricproperties.
氧化锌（ZnO），作为一种重要的宽禁带半导体材料，具有优良的光电性能，目前已被广泛地研究应用到发光二极管、光伏电池、激光等光电领域。
参考来源 - 一维纳米ZnO及其复合材料的发光二极管·2,447,543篇论文数据，部分数据来源于NoteExpress
它弥补了宽禁带半导体输运性能差的缺点，已研制成大功率的HFET。
It remedies the weakness of low transport properties in wide bandgap semiconductors, based on these properties high power HFETs have been fabricated.
宽禁带半导体器件在有源相控阵雷达中的潜在应用在文中也进行了讨论。
Potential application of WBG semiconductor devices in active phased array radar are discussed in this paper as well.
研究表明，氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC.
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