它弥补了宽禁带半导体输运性能差的缺点，已研制成大功率的HFET。
It remedies the weakness of low transport properties in wide bandgap semiconductors, based on these properties high power HFETs have been fabricated.
宽禁带半导体器件在有源相控阵雷达中的潜在应用在文中也进行了讨论。
Potential application of WBG semiconductor devices in active phased array radar are discussed in this paper as well.
研究表明，氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC.
捕捉到这一附加值，积分必须从提高工作频率宽禁带(WBG)设备和温度的全部优点。
To capture this added value, an integrator must get the full benefit from the increased operating frequency and temperature of wide-bandgap (WBG) devices.
长期从事先进功能材料薄膜制备和离子注入改性方面的科学研究，重点是宽禁带半导体材料与器件。
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
研究结果表明：一维右手材料和左手材料构成的光子晶体具有宽禁带的特点，禁带中出现多个共振透射峰。
The investigation results show that the band gap of the photonic crystal made of LHM is wide and multi-transmittance peaks appear in the forbidden band.
该公司的NEXT项目是基于DARPA的另一项GaN技术的成功，即宽禁带半导体射频应用(WBGS - RF)项目。
The company's NEXT program builds on the success of another DARPA initiative involving GaN technology — the Wide Bandgap Semiconductors for RF Application (WBGS-RF) program.
近几年来，宽禁带半导体材料引起人们的关注，因为这些材料在蓝光及紫外光发光二极管、半导体激光器和紫外光探测器上有重要的应用价值。
In recent years, much attention has been given to wide band gap semiconductors for the wide USES in blue and ultraviolet light emitters and detectors.
另外，研究结果表明组成光子晶体的两种材料的折射率差别越大，两种电磁模的禁带越宽，越容易产生完全光子禁带。
The results of study also shown that the biger difference of refractivity between two kinds of materials, the wider of the bandgap for two electromagnetic modes, and easier to produce full bandgap.
同样的，加载电感偏离匹配电感越大，禁带就越宽，同时禁带也越深。
Similarly, the ratio of loaded inductance and the matched capacitance also directly influences the width and depth of the bandgap.
同样的，加载电感偏离匹配电感越大，禁带就越宽，同时禁带也越深。
Similarly, the ratio of loaded inductance and the matched capacitance also directly influences the width and depth of the bandgap.
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