... barrier height 势垒高度 barrier junction 势垒结 barrier layer rectifier 结型整流 ...
基于220个网页-相关网页
制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
应用推荐