制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
在该模型的基础上，讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化。
Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
结果表明，与界面光滑的结比较，界面粗糙的结的有效势垒宽度较窄，有效势垒面积较小。
The results showed that the effective barrier width and area of the junction with the rough interfaces were smaller than those of the junction with the smooth interfaces.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
在正统理论的基础上 ，提出了单电子三势垒隧穿结模型的主方程 ，并用线性方程组解法求出了其稳态解 。
The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
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