研究了用于喇曼放大的绝缘硅(SOI)脊形波导中自由载流子寿命与非线性光学损耗的关系。
The lifetime of free carriers in a silicon-on-insulator (SOI) rib waveguide, which is used for Raman amplification, is studied in connection with the nonlinear optical loss.
这些膜使用三层导电材料，氮化钛制成，中间隔着硅土绝缘层。
These membranes are made of three layers of a conducting material, titanium nitride, separated by insulating layers of silica.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
请注意我们的试验箱和系统中所使用的密封材料和电缆绝缘中含有硅。
Please note that the sealing material and cable insulation used in our test units and systems contains silicone.
也可以把各种硅清漆烘焙或者阴干到玻璃或陶瓷表面上，但即使这样处理以后，触摸也很容易损坏其绝缘性能。
Various silicone varnishes can also be baked or air-dried onto glass or ceramic surfaces, but even after this treatment, handling can easily spoil the insulators.
配制绝缘粉末涂料，通过涂料的高压蒸煮实验，耐湿热实验，研究有机硅改性环氧树脂的电性能。
For the modified epoxy powder coatings, we researched electricity properties through high pressure digestive experiment, resistance humity experiment.
配制绝缘粉末涂料，通过涂料的高压蒸煮实验，耐湿热实验，研究了有机硅改性环氧树脂的电性能。
Electricity properties of the modified epoxy powder coatings were researched through high pressure digestive experiment, resistance humity experiment.
底部硅层ꢃ-在绝缘层下部的晶圆片，是顶部硅层的基础。
Base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
多孔硅由于其热绝缘特性以及技术优势，已经在微传感器领域得到广泛的应用。
Porous silicon has been used broadly in the fields of micro-sensors because of its special thermal isolation performance and advantages in technology.
本厂还可以为顾客设计生产耐热硅橡皮绝缘软电线（YG）；
This factory also may design the production heat-resisting silicon rubber insulation cord for the customer(YG);
目前，有机硅材料广泛应用于电力系统外绝缘，用于防止污闪事故的发生。
Silicone material has been widely used in power system to prevent pollution flashover of outdoor insulation.
并在其表面沉积了氧化钒热敏薄膜，研究了多孔硅样品的热绝缘性能对氧化钒热敏薄膜阻温特性的影响。
The influence of the thermal isolation of the PS on resistance's sensitivity of VOx film was investigated.
用硅绝缘器(SOI)制造处理器是另一码事，它们尚未批量生产。
Processors built using SOI are another matter. They are not yet in mass production.
设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。
An arrayed waveguide grating (AWG) demultiplexer with total internal reflection (TIR) mirrors is designed based on silicon-on-insulator (SOI) material.
绝缘体上的硅（SOI）材料是制作平面光波导器件的一种主要材料，具有良好的光学、电学和机械特性。
Silicon-on-Insulator (SOI), boasting good optical, electronic and mechanical properties, is one of the common materials of Integrated Planar-Lightwave-Circuits (PLCs).
本文评述了硅材料与其它半导体、绝缘物和导体的单片兼容技术及应用。
In this paper, a review is made on monolithic compatibility of silicon with other semiconductors, insulators and conductors, and on its applications.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
研究了产品外绝缘表面积污期间的憎水迁移过程，结果表明，外绝缘材质中自由状态硅氧烷分子是维持长期运行产品憎水迁移性能的唯一起作用的因素。
The result shows that the free state siloxane molecules in the external insulating material is the only contributor that supports the long term product hydrophobicity migration level.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。
The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented.
研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。
The fabrication process of a compact planar waveguide etched-grating(EDG) demultiplexer based on silicon-on-insulator(SOI) is studied.
聚酯改性硅漆（SP）是用于硅器件表面保护的高纯绝缘材料。
Silicone resin modified polyester(SP) is a kind of ultra-pure surface protection material used in semiconductor device.
介绍了一种全新的体硅微机械工艺，可以取代SOI硅片而直接在普通硅片上对不同的侧壁电学导通部分进行绝缘。
Introduced a new bulk silicon micromaching technology to replace SOI wafer with normal silicon wafer in the application of sidewall electrical connection.
它能够在刻蚀深度不理想，甚至是脊型狭缝波导的情况下，保证两侧硅电极之间的电绝缘。
It can maintain electrical isolated for the unideally etched case, and even for the rib-type slot structure.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅橡胶是一类以聚硅氧烷为主链的高分子材料，它具有优异的耐热性、耐寒性和电绝缘性，广泛应用于社会各种行业。
Silicone rubber is a kind of polymer with polysiloxane-based chain, which has been widely used in many fields for its excellent heat resistance, cold resistance and electrical insulation.
该绝缘层位于该硅基材的第一表面。
The insulating layer is positioned on a first surface of the silicon substrate.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
本文介绍了一种新型H级屏蔽电动机的绝缘体系，在耐辐照方面它大大优于有机硅绝缘体系。
This paper introduces a class H insulation system of shield motor. The new insulation system is better than of silicon in irradiation resistance, breakdown strength, mechanical properties and so on.
应用推荐