界面层的存在使介电系数、自发极化、矫顽电压、漏电流都与薄膜的厚度有关。
Dielectric constant polarization coercive voltage and leakage current have relations with the thickness of thin films because of the interface layer.
得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。
The relationship between the threshold voltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired.
计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响。
The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed.
存在一个巨大的IR降(欧姆电位损失)没有补偿或校正，因此曲线图中显示的很多电压并不是界面电位。
There is a huge IR drop (ohmic potential loss) that has not been compensated or corrected for, so the interfacial potentials are nothing like the many Volts appearing in the plots?
数字可设定地址的光界面- - -第206部分：控制开关专门要求- - -从数字信号转化为d.c。电压(设备类型5)。
Digital addressable lighting interface - Part 206: Particular requirements for control gear - Conversion from digital signal into d. c. voltage (device type 5).
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
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