沉积温度升高，沉积深度和均匀性降低。
The depositing uniformity and depth decrease with the depositing temperature increases.
该沉积温度可以在室温和100摄氏温度之间。
The deposition temperature can be between room temperature and 100 degrees centigrade.
研究了沉积温度对薄膜的微结构和光学性能的影响。
The effect of deposition temperature on films" microstructures and optical properties was investigated."
影响扩散层的主要因素是基体材料的成分和沉积温度；
It is the compostiton of bulk material and deposition temperature that mainly affects the diffusion layer.
研究了沉积温度对膜层的厚度、结合力及硬度的影响。
The effects of depositing temperature on the thickness, adhesion strength and hardness of tin film have been studied in this paper.
随着沉积温度的降低，晶粒尺寸减小，晶格失配度增大；
With the increase of deposition temperatures, the crystalline sizes were increased but the crystal lattice distortions were decreased.
当沉积时间不变时，薄膜的耐磨性能随沉积温度的升高而提高。
With the same deposition time, the wear resistance becomes better and better with the increasing of temperature.
增加沉积温度会促进薄膜由立方结构向六角结构转变和带隙宽度的窄化；
Increase deposition could lead to transition of the CdS phase between the cubic and hexagonal structure.
本发明衬底选择范围广、成本低，光电转换效率高、沉积温度低，工艺简单。
The substrate has wide selection range and low cost, the photoelectric conversion efficiency is high, the deposition temperature is low and the technique is simple.
针对脉冲偏压电弧离子镀技术，分析了影响基体沉积温度的各项因素及其影响程度。
The influencing factors and their weights on deposited temperature have been studied in detail during pulsed bias arc ion plating (PBAIP).
在该模型中，我们考虑了沉积速率、沉积温度以及沉积角度等影响薄膜生长的参数。
By simulation of thin films growth, some microscopic processes can be revealed in extreme condition, such as high temperature and high deposition rate.
各参数对沉积速率影响的主次顺序为：沉积温度、沉积时间、氢气流量、氮气流量。
Primary and secondary sequence of parameters is temperature, time, flow rate of hydrogen and nitrogen.
用拉曼光谱、SEM和UV分光光度计对不同沉积温度下沉积的薄膜的结构特性进行分析。
Raman scattering, SEM and UV spectrophotometer are used to analyse the structure changes of microcrystalline silicon films throughout the deposition temperature range.
采用各种分析手段研究了沉积温度和真空退火处理对薄膜结构、表面形貌及光电性能的影响。
The effects of substrate temperature and post deposition vacuum annealing on structural, electrical and optical properties of ZMO: ga thin films were investigated.
研究了直流等离子体化学汽相沉积（CVD）法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature.
分别考察了载气、沉积温度以及原料配比等工艺参数对沉积速率的影响，并对薄膜的组成、结构及硬度等性能进行了分析。
The influence parameters on deposition rate was investigated, and the composition and structure of as-deposited films were characterized by IR, XRD and hardness measurement.
分别考察了载气、沉积温度以及原料配比等工艺参数对沉积速率的影响，并对薄膜的组成、结构及硬度等性能进行了分析。
The influence parameters on deposition rate was investigated, and the composition and structure of as-deposited films were characterized by IR, XRD and hardness measurement.
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