Laser induced chemical vapor deposition is the main method among the methods of fabricating nano Si3N4.
激光诱导气相沉积法是制备纳米氮化硅粉末的主要方法之一。
In this study we designed and made the preparation equipment of nano-silicon powder by LICVD (laser induced chemical vapor deposition), and introduced the designing thought of key parts.
本研究自行设计制作了激光诱导化学气相沉积(LICVD)纳米硅粉制备设备，并对关键部件的设计思路进行了阐述。
It is used in many areas. In this paper, the general principles of LICVD (laser induced chemical vapor deposition) were investigated and the measures to reduce dissociated si were put forward.
本文研究了激光诱导化学气相沉积法制备纳米氮化硅的工作原理，提出了减少游离硅的措施，利用双光束激发制备了超微的、非晶纳米氮化硅粉体。
The basic principles, deposition systems and laser sources of pulsed laser evaporation deposition (PLED) and laser-induced chemical vapor deposition (LCVD) are simply introduce.
简要概述了脉冲激光蒸发淀积(PLED)和激光诱导化学气相淀积(LCVD)的基本原理、淀积系统和激光器。
The basic principles, deposition systems and laser sources of pulsed laser evaporation deposition (PLED) and laser-induced chemical vapor deposition (LCVD) are simply introduce.
简要概述了脉冲激光蒸发淀积(PLED)和激光诱导化学气相淀积(LCVD)的基本原理、淀积系统和激光器。
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