Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.

这两个栅和场氧化层都是通过热氧化过程生长出来的，因为只有热氧化才可以提供具有低陷阱密度性能最好的氧化层。

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Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.

这两个栅和场氧化层都是通过热氧化过程生长出来的，因为只有热氧化才可以提供具有低陷阱密度性能最好的氧化层。

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