这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
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