一个用薄栅氧化层电晶体被太多的驱动电压高。
A transistor with a thin gate oxide being driven by too high of a voltage.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
超薄栅氧化层的可靠性是MOS集成电路中最重要的问题之一。
The reliability of super thin gate oxides is bne of the most important problems in MOS integrated circuits.
热空穴注入的实验结果表明薄栅氧化层的击穿不仅由注入的空穴数量决定。
Hot holes injection experiments reveal that the life of oxide breakdown is not simply determined by the total number of injected holes.
结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
The results show that the limiting factor for thin gate oxides depends on the balance between the amounts of injected hot electrons and holes.
研究结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
The results show that the limiting factor in thin gate oxides breakdown depends on the balance between the amount of injected hot electrons and holes.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
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