一个用薄栅氧化层电晶体被太多的驱动电压高。
A transistor with a thin gate oxide being driven by too high of a voltage.
经时绝缘击穿(TDDB)是评价薄栅氧化层质量的重要方法。
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
超薄栅氧化层的可靠性是MOS集成电路中最重要的问题之一。
The reliability of super thin gate oxides is bne of the most important problems in MOS integrated circuits.
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