提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
在部分耗尽型SOI结构中，SOI中顶层硅层的厚度为50-90nm，因此沟道下方的硅层中仅有部分被耗尽层占据，由此可导致电荷在耗尽层以下的电中性区域中累积，造成所谓的浮体效应。
In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
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