本文介绍用直流辉光放电装置制备非晶硅薄膜。
Amorphous silicon films were fabricated with a dc glow discharge system.
研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied.
研究纳米硅薄膜作为冷阴极的真空电子场发射特性。
Efficient field emission was observed from si nano-crystalline film.
本文主要研究陶瓷衬底上多晶硅薄膜太阳电池的制备。
The fabrication of poly-crystalline silicon thin film solar cell on ceramic substrates is studied in this thesis.
利用薄膜的暗电导和激活能对硅薄膜的电学特性进行了表征。
The electrical properties of the films were characterized by their room temperature electrical conductivity and the activation energy.
用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况。
The distribution of rare earth ions embedded into porous silicon films was observed by Rutherford backscattering spectrometry.
设计了一种以多晶硅薄膜作为振动膜片的电容式硅微声传感器。
A capacitive micro-acoustic sensor with a polysilicon film as diaphragm was designed in this paper.
文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
着重研究了沉积工艺条件对多晶硅薄膜压阻灵敏度系数的影响。
The effect of thin film piezoresistive property related with deposit condition on polycrystalline silicon is studied.
亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺。
The fabrication of submicron vertical silicon screen is a key step for fabricating Josephsonjunction coupled by vertical silicon membrane.
晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。
Crystalline silicon thin film solar cells have been widely investigated and commercially tested in recent years.
采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。
Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).
多晶硅薄膜良好的压阻特性使其在MEMS压阻式传感器中得到了广泛应用。
Polysilicon films, due to its favourable piezoresistive properties, have been widely applied in MEMS piezoresistive sensors.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
进一步推测，AZO薄膜微结构随退火的变化将导致硅薄膜微结构受到牵连影响。
And we predict that the variation of microstructure of AZO layer beneath silicon thin film will affect the microstructure of silicon thin film.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
最后，采用PC1D电池模拟软件对高温路线制备的多晶硅薄膜电池进行了理论模拟。
At last, we use the PC1D program to simulate polycrystalline silicon thin film solar cells prepared under high temperature.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
这样我们得到了三种薄膜：玻璃表面的硅薄膜、硅靶上的薄膜和转移到硅基底上的薄膜。
Then three kinds of films are acquired: silicon film on the surface of glass, the film on silicon target and transferred film on another silicon substrate.
研究了溅射条件对钽硅薄膜电性能的影响以及溅射电压、溅射电流和溅射气压之间的关系。
The effect of sputtering conditions on electrical properties of the tantalum-silicon films and the relation between sputtering voltage, current and pressure was investigated.
研究者们已经制造出220纳米厚度的硅薄膜，相比于25倍厚的无图案薄膜，它能吸收同样数量的光。
The researchers have made a 220-nanometer-thick silicon film that absorbs the same amount of light as an unpatterned film 25 times thicker.
声空化所引发的特殊的物理、化学环境为制备高效发光的多孔硅薄膜提供了一条重要的途径。
The special physicochemical environment caused by sonic-vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films.
另外，薄膜硅技术也被开发出来，将非晶硅或者微晶硅薄膜放到玻璃那样的平的大面积衬底上。
Besides, thin-film silicon technologies have also been developed to place a thin film of amorphous or microcrystalline silicon onto flat large-area substrates such as glass.
利用原子力显微镜、二次离子质谱分析仪和探针，对多晶硅薄膜的高温退火特性进行了实验研究。
An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe.
利用原子力显微镜、二次离子质谱分析仪和探针，对多晶硅薄膜的高温退火特性进行了实验研究。
An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe.
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