作为应用例子，文中给出了局域界面态的计算。
An application is given here for the localised interface states.
这是因为有更多的界面态的影响，由于叉指式电极配置引入。
This is because that more influences of interface state were introduced due to the interdigital electrode configuration.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.
利用平面波展开方法与超原胞方法研究了两种不同晶格的光子晶体异质结的界面态。
We have investigated the guide modes in two kinds of two_dimensional photonic crystal heterostructures by using the plane wave expansion method combined with the supercell technique.
紫光和紫外光来源于二氧化硅的氧缺陷、纳米晶硅与二氧化硅的界面态发光的综合效果。
UV and purple emission were derived from the combination of oxygen vacancy defects of silica and the interface luminescence of the Si nanometer grains and silica.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
同时对钛酸钡系ptcr半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
According to defect chemistry of BaTiO3 semiconducting ceramics, the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
利用菲涅尔公式讨论了几种不同界面上线偏振光反射时的偏振态，分析了振动方位角的变化情况。
This paper analyzes the polarization of reflected light by Fresnel formula when linearly polarized light is incident on different interfaces, and discusses the change of vibration azimuth angle.
运用线性系统的无穷级微扰论研究了表面和多层(AB)界面系统的声子态。
The phonon states of surface and multi-film (AB) interface systems have been studied by using the infinite order perturbation theory for linear systems.
针对第一个问题，国内外已提出很多从结构上解决的方案且得到有效应用，如何减少表面态和界面层的影响仍没有找到比较好的解决方法。
At present, many effective solutions have been given for the first question. But, there's no any method to reduce the influence of surface states and interfacial layer on breakdown voltage.
陆架浅海沉积物—海水界面上的溶解态生源物质通量的准确估算是海洋生态系统动力学研究中的关键性问题之一。
One of the key issues in the marine ecosystem dynamics studies is to accurately estimate the dissolved biogenic substance flux across the sediment-seawater interface in the shelf sea.
分析了光波在各界面折射时偏振态的变化，提出了会聚偏光干涉合成振幅的计算方法。
Changes of light polarization in each interface are analyzed and the method to calculate total amplitude in convergent polarized light interference is proposed.
热态时，密度锁内分层界面的形成对大环流运动起到了阻碍作用。
And in hot state, the formation of fluid stratified interface in the density lock will stop the large circulation of fluid movement.
在有光的条件下，浮游藻类和一些光自养生物对沉积物水界面溶解态的营养盐的直接吸收，从而减少了上覆水中可与沉积物可交换的营养盐的含量；
Many phytoplankton and autotroph absorb the DIN of the bottom water that decrease content of DIN in bottom water and change the fluxes of the DIN.
在有光的条件下，浮游藻类和一些光自养生物对沉积物水界面溶解态的营养盐的直接吸收，从而减少了上覆水中可与沉积物可交换的营养盐的含量；
Many phytoplankton and autotroph absorb the DIN of the bottom water that decrease content of DIN in bottom water and change the fluxes of the DIN.
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