指出能量转换特性的最重要的弛豫过程是电子-声子相互作用，决定了由电子载流子系统到晶格的能量转换。
It is presented that one of the most important energy relaxation processes is the electron-phonon interaction, which determines the energy transfer from electronic carrier system to the lattice.
这一设计包含了一条足够细的隧道，当它关闭时，里面完全没有载流子(电子或空穴)，当它打开时，里面便充满了载流子，起到了阀门的作用。
The design incorporates a channel thin enough to become entirely devoid of carriers (ie, free electrons or holes) when switched off, thus acting as a valve, yet full of them when switched on.
计算结果表明，发射区载流子寿命的变化几乎不影响注入到基区的电子电流，但却成反比例地影响基区空穴电流。
The calculated results show that the electron current injected into the base region is not affected, but an increase of the base hole current is increased with the lifetime reduction.
限制层在提供光学限制的同时，对载流子（主要是导带电子）分布也有影响。
The SCH layer can provide optical confinement, but at the same time, it also affects the distribution of the carrier(especially to the electrons in conduction band).
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。
The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
而这种计算机模拟方法不仅可以得到自由光电子的衰减曲线，还可同时获得各种俘获中心中载流子的行为曲线。
However, through computer simulation, it can obtain not only the decay curve of free photoelectrons, but also the behavior curve of carriers in all kinds of trapping centers.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
结果表明，和氢溴酸对PANI的质子酸掺杂不同，溴掺杂过程中产生的溴负离子增加了PANI的载流子浓度，形成了电子转移复合物，提高了聚苯胺的电导率。
It is showed that bromine anions and charge transfer complex formed in the doping process enhanced the charge carrier concentration then promote the conductivity of PANI.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
电子态的调控通常通过三种方式进行，首先，对于块体材料，我们可以利用温度、压力、载流子掺杂、磁场、缺陷等方法调控电子态的性质。
First, as to the bulk materials, we can change the temperature, pressure, carrier doping, magnetic field, and defects to tune their electronic states.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
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