本文介绍了一台自动引线键合装置。
引线键合是实现微波混合电路的关键技术。
Wire bonding is a critical technique for realizing microwave hybrid circuit.
超声功率是影响粗铝丝引线键合强度的最主要因素之一。
The influences of ultrasonic power on heavy aluminum wire wedge bonding strength were investigated.
引线键合的效率主要依赖于受表面特性影响的键合点的可焊性。
The yield of wire bond mainly depends on the bondability of the bond pad which is affected by the surface characteristics.
在超声引线键合过程中，键合力是影响键合强度的重要因素之一。
In ultrasonic wire bonding process, the bonding pressure is one of the most important factors to the bonding strength.
在超声引线键合过程中，键合压力是影响键合强度的重要因素之一。
The characteristics of bonding force in the ultrasonic bonding process were also studied.
气体等离子技术能够用于在引线键合前清洗焊盘以改进键合强度和成品率。
Gas plasma technology can be used to clean pads prior to wire bonding to improve bond strengths and yields.
试验研究了不同超声功率条件下，键合时间对粗铝丝引线键合强度的影响规律。
The effect of bonding time on the bonding strength of thick aluminum wire wedge bonding was studied under different ultrasonic power conditions.
粗铝丝超声引线键合；换能器驱动电流；信号时频分析；特征提取；质量在线监测。
Aluminum wire ultrasonic bonding; transducer drive current; signal time-frequency analysis; feature selecting; quality online monitoring.
根据超声引线键合实验平台电路结构，设计了PZT(压电陶瓷)驱动信号采集电路。
According to the circuit of ultrasonic wire bonding experiment platform, a piezoelectric transducer (PZT) driver signal acquisition circuit was designed.
基于解析模型的方法，研究了超声波在热超声金丝球引线键合机变幅杆中的传递规律。
Based on the analysis model, the ultrasonic transfer on the horn of wire bonder was studied.
介绍了电子封装材料中用于引线键合工艺的几种主要导电丝材料，包括金丝、铜丝和铝丝。
Several silk materials including gold silk, copper silk and aluminum silk used as conductor in wire bonding technology in electronics packaging materials were introduced.
引线键合过程中的工艺参数较多，他们直接影响键合质量的好坏，影响半导体器件的可靠性。
There are so many process parameters affecting bond quality in wire bonding and these parameters are directly related to the reliability of semiconductor device.
在芯片测试中，若引线焊盘上的铝层被探针扎穿，就会影响引线键合的牢固性和器件的可靠性。
If the Al film on the bond pad is pierced through by the probe in wafer probing, the wire bonding strength and device reliability would be affected.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
由于市场对小体积、高集成度和高散热率芯片的需求量与日俱增，引线键合工艺的关键参数——焊盘间距也不断缩小以满足市场要求。
As the demand increasing steadily for small volume, high density and high heat-dissipation rate IC, the key parameter of wire bonding — pad pitch has to shrink in accordance.
结果显示由于引线键合工艺、注塑工艺以及回流焊中封装体各部分不同的热膨胀系数引起的热应力和塑性变形是产生引脚跟断裂的主要因素。
The result shows that the plastic strain at the heel region induced by wire bonding process, molding process and the thermal stress and strain in solder reflow are the main causes of heel crack.
结果显示由于引线键合工艺、注塑工艺以及回流焊中封装体各部分不同的热膨胀系数引起的热应力和塑性变形是产生引脚跟断裂的主要因素。
The result shows that the plastic strain at the heel region induced by wire bonding process, molding process and the thermal stress and strain in solder reflow are the main causes of heel crack.
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