半导体异质外延材料和量子点材料在纳米电子学、光电子学中具有广泛的应用前景。
The materials of semiconductor hetero-epitaxy and quantum dots are widely used in the fields such as nano-electronics and optoelectronics.
本文介绍了影响半导体异质外延晶片质量的主要因素，检测方法，几个典型测试结果。
The main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.
评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。
The major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。
With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up.
使用X射线衍射和透射电镜分析，表明异质结是c轴取向外延生长。
X-ray diffraction and transmission electron microscopy establish that LCCO grew epitaxially inc-axis orientation on LCMO.
使用X射线衍射和透射电镜分析，表明异质结是c轴取向外延生长。
X-ray diffraction and transmission electron microscopy establish that LCCO grew epitaxially inc-axis orientation on LCMO.
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