外延沉积接着用以形成一外延层于该外延表面上。
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
本发明提供一外延沉积工艺，其包含干式蚀刻工艺与后续的外延沉积工艺。
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed.
评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。
The major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
结果表明，在表面外延生长初期沉积层呈现出非常丰富的分形几何特征，通过控制生长参数，可以得到不同微结构的团簇。
It is shown that at the initial stage of growth, the morphologies present ample fractal shape and by controlling growth parameters it is possible to obtain nano clusters with different structures.
它有效地增加了基体的表面积，有利于电沉积初期铬原子沿基体原有晶格的外延生长；
The surface area of the matrix enlarged effectively. At the beginning of the deposition, the chrome atoms grew along the outside of the matrix original crystal lattice. Ther…
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
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