理学学士（四川大学）
哲学硕士（香港大学）
哲学博士（香港大学）
长期从事化合物半导体材料的研究，并已经在 Physical Review B, Journal of Applied Physics, Nuclear Instrument and Methods in Physics Research B 等国际著名学术刊物上发表论文 10 多篇。
培养毕业研究生 1 名，现已招收研究生 6 名。在凝聚态物理专业（半导体材料方向）招收硕士研究生。
邓爱红
百科内容来自于：
人物简介
研究方向
个人生平
学术论文
近期发表的主要学术论文：
[1] A.H. Deng, P. Mascher, Y. W. Zhao, L. Y. Yin, “Effects of annealing ambience on the formation of compensation defects in InP”, Journal of Applied Physics, 93, 2, 930 (2003).
[2] A. H. Deng, Y. Y. Shan, C. D. Beling, S. Fung, “Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors”, Journal of Applied Physics, 91, 6, 3931 (2002).
[3] Y. Y. Shan, A. H. Deng, C. C. Ling, S. Fung, C. D. Beling,Y. W. Zhao, T. N. Sun, N. F. Sun, “Positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP”, Journal of Applied Physics, 91, 4, 1998 (2002).
[4] C. C. ling, A. H. Deng, C. D. beling, S. Fung, “Positron lifetime spectroscopic studies of as grown 6H-silicon carbide”, Applied Physics A, 70, 33 (2000).
[5] A. H. Deng, B. K. Panda, S. Fung , C. D. Beling, “Positron lifetime analysis using the matrix inverse Laplace transformation method”, Nuclear instruments and methods in Physics Research”, B, 140, 3-4, 439 (1998).
[6] C. D. Beling, A. H. Deng, Y. Y. Shan, Y.W. Zhao, S. Fung, N. F. Sun, T. N. Sun, X. D. Chen, “Postron lifetime study of compensation defects in undoped semi-insulating InP”, Physical Review B, 58, 20, 13648 (1998).
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