SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
所述的在金属氧化物电阻片 侧面形成无机高阻层的方法的特征是不需经过预烧步骤。
The forming method of the inorganic high resistance layer at the side surface of the metallic oxide resistor is characterized by not needing a preburning step.
本发明涉及一种金属氧化物电阻片侧面的无机高阻层及其形成方法，属于电 阻片技术领域。
The invention relates to an inorganic high resistance layer at the side surface of a metallic oxide resistor and a forming method thereof, belonging to the technical field of resistors.
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