一动态随机存取存储器（ＤＲＡＭ）集成电路，包含一确定在一半导体基板内的凹陷区域。此凹陷区域具有自一底面延伸的基本上垂直的边侧。一场效三极管经确定以邻接于该凹陷区域。一包含有下电容器板、电容介电体及上电容器板的电容器结构，确定在该凹陷区域中、该场效三极管上方，借此提供较大的电容器表面。
同时提供高密度存储器的小尺寸，这一解决方案还保持高速传输与低噪声干扰，因而成为理想的选择移动市场。
While providing high-density memory with small footprint, this solution also maintains high speed transmission with low noise interference which becomes an ideal choice for mobile market segment.
介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
成功实现了用高密度、相对低速的FLASH存储器对高速实时数据的可靠存储。
By using of the storage board, high speed real-time data can be successfully stored with high density lower speed FLASH chips.
应用推荐