为了分析光纤组束激光对可见光硅CCD的有效干扰距离，对组束激光功率及可见光CCD的饱和阈值进行了分析。

To analyze the effective jamming distance of combined fiber laser to visible light silicon CCD, the power of combined laser and saturation threshold of visible light silicon CCD are discussed.

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本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。

DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.

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数值结果验证了阈值磁场和饱和磁场满足解析方程的正确性。

Nume-(rical) results verified the analytic equation satisfied by the threshold field and saturation field.

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