... 与输 出电压 VCB 间的关系ò 在输出特性曲线中,可以区分出三个区域,即作用区(Active regi on)、饱和区(Saturation region)与截止区(Cut-off region): q作用区:E-B 接面为顺向偏压,C-B 接面为反向偏压,电晶体在 此区域内失真最小;在底端,IE=0,...
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... saturated vapor 饱和蒸气 saturation area 饱和区 saturation characteristic 饱和特性 ...
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... 饱和逻辑电路 saturated logic circuit 饱和区 saturation zone 饱和区域 saturation region ...
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The data indicates that the error of theoretical and experimentical values in saturation region has been reduced from more of 29% to less of 8%.
把原有公式在饱和区误差从29%以上,减小到8%以下。
参考来源 - 宽温区耐高温硅集成电路中MOS晶体管的电学特性 in C·2,447,543篇论文数据,部分数据来源于NoteExpress
而MOSFET的静态线性区和饱和区的特性也用于表示阳极电压。
The linear and saturate portion of MOSFET static state behavior is also included.
在低过饱和区,非均匀成核是主要的,实验结果偏离了均匀成核的理论表征;
At the low supersaturation region, experimental results deviate from the theoretical characterization of homogeneous nucleation.
抽气清除法(SVE)是最常用的清除土壤非饱和区中可挥发污染物的方法之一。
Soil vapor extraction (SVE) technology is one of the most useful methods to remove volatile organic compounds (VOCs) in unsaturated soil.
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