说明顶层的金属纳米晶作为一层额外的电荷俘获层可以通过直接隧穿机制进一步延长保留时间和提高平带电压漂移量。
The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.
本发明可以通过形成在层间 绝缘层中并且位于顶层的金属线的至少一侧的聚合层图案而避免保护层的 损坏。
The invention can prevent the damage to the protective layer by forming a polymer layer pattern in the insulating interlayer on at least one side of the uppermost layer metal line.
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