电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
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