结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
在这些应用中，制备供集成铁电薄膜的优质底电极就显得尤为重要。
In these applications, it is essential to fabricate high quality ferroelectric thin films on proper electrode materials, such as conductive oxides.
薄膜生长技术的进展，为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。
Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films.
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