初步探索了阻挡层制备、扩散制结以及电极制备等相关工艺。

We have prepared the diffusion barrier layers, pn junction and electrodes.

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最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。

Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.

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