离子阱区的压力是通过建立区域气体流动模型计算得到。
Pressure in the ion trap is evaluated by establishing gas flow model.
以及由所述阱区、所述保护环区和所述衬底拾取区形成的保护性二极管。
The protective diode is formed including the well region, the guard ring region, and the substrate pickup region.
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
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