...有机电致发光二极管；有源矩阵；阈值电压漂移；像素电路 [gap=1162]Keywords: OLED ; active matrix ; threshold voltage shift ; pixel circuit ...
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亚阈斜率、阈值电压漂移、衬底技术和场氧抗辐射能力已经成为器件按比例缩小给器件带来冲击的最主要的四个方面。
The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
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