文中采用数值迭代法和建立等效电流模型，对P_B层结构参数和门极-阴极几何图形尺寸进行了合理设计。

Reasonable designs of the structure parameters of PB layer and the gate-cathode geometry are obtained by numerical iteration and an equivalent current model.

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计算了在100 V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。

Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.

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一旦器件(晶闸管)导通，门极电流即可去掉。

Once the device begins to conduct, it is latched on and the gate current can be removed.

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