MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
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