...，新技术不仅应用了在55nmDRAM混载LSI工艺“UX7LSeD”中所采用的铪（hafnium）栅极绝缘膜，还使用了镍硅化物（nickel-silicide）栅电极、做为DRAM电容器使用的锆氧化物（zirconium-oxide）高介电率（High-k）绝缘膜技术等技术，因此能够降低沟道部分的杂质浓度...
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镍硅碳化物 Nikasil
In this thesis, the problem and mechanism of Ni encroachment in devices source or drain are studied. The NiSi formation process is optimized by a series of comparison experiments.
本文通过研究分析镍的扩散发生机制,针对镍硅化物工艺进行对比实验,优化了其制备工艺。
参考来源 - 65nm以下CMOS镍硅化物中镍过度扩散的工艺优化·2,447,543篇论文数据，部分数据来源于NoteExpress
目前主要的改善方法是向铝包镍中添加元素，例如：添加金属钼、镍硼粉和难熔金属硅化物等。
The main measurement to improve its properties is to add something to the nickel-aluminum system, such as metallic molybdenum, nickel-boron and refractory metal silicates.
由于添加5％的钯金属作为催化剂和其它的膜基质材料稀释剂，如5％氧化镁和9％抗氧化的镍、硅化物，保证了气体响应的可靠性和准确度。
The reliability and accuracy of the gas response were ensured by the addition of 5wt% palladium metal catalyst and other film matrix diluents, such as 5wt% magnesium oxide and 9wt% oxidation-re…
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