abbr. SiGe
misc. germanium-silicon
现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
近年来锗硅合金在高速器件和光电子应用中有大量的可能使用研究。
Recently alloys of silicon and germanium have been studied a great deal for possible use in high-speed device and optoelectronics applications.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
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