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本文用反射电子显微术观察了球状铂单晶表面的微观结构，分析了单晶形成中内部缺陷的变化。
The surface microstructures of spherical Pt single crystals are studied by reflection electron microscopy, and the defect configurations in the crystals are also analysed.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
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