metal semiconductor device ==> 金属半导体接触装置 metal semiconductor interface ==> 金属半导体界面 metal semiconductor junction ==> 金属半导体结 ..
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研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
谱峰随着覆盖度改变的移动说明：在有机半导体和金属的界面处，吸附层与衬底发生了相互作用。
The shift in binding energy with varying coverage indicates that there is an interaction between the molecule and the substrate near the interface.
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